N-channel enhancement-mode power MOSFET uses Super J MOS S2 technology for switching applications. It is rated for 600 V drain-source voltage and 23.9 A continuous drain current at 25 °C case temperature. The device specifies 0.160 ohm maximum drain-source on-resistance at 10 V gate drive and 9.0 A drain current. TO-247-P/TO-247-P2 packaging provides gate, drain, and source terminals, with a -55 °C to 150 °C storage range and 150 °C maximum channel temperature. The lead terminals are Pb-free, RoHS compliant, and molded with halogen-free compound.
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Fuji Electric FMW60N160S2HF technical specifications.
| Transistor Type | N-Channel enhancement mode power MOSFET |
| Drain-Source Voltage | 600V |
| Drain-Source Breakdown Voltage | 600 minV |
| Continuous Drain Current at 25°C case | 23.9A |
| Continuous Drain Current at 100°C case | 15.1A |
| Pulsed Drain Current | 71.6A |
| Gate-Source Voltage | ±30V |
| Maximum Drain-Source On-State Resistance | 0.160Ω |
| Typical Drain-Source On-State Resistance | 0.146Ω |
| Gate Threshold Voltage | 3.5 to 4.5V |
| Maximum Power Dissipation at 25°C case | 110W |
| Maximum Power Dissipation at 25°C ambient | 2.50W |
| Input Capacitance | 990 typpF |
| Output Capacitance | 35 typpF |
| Reverse Transfer Capacitance | 5.3 typpF |
| Total Gate Charge | 43 typnC |
| Diode Forward On-Voltage | 0.90 typ, 1.35 maxV |
| Operating Channel Temperature | 150 max°C |
| Storage Temperature Range | -55 to +150°C |
| Thermal Resistance Channel to Case | 1.136 max°C/W |
| RoHS | Compliant |
| Lead Terminal | Pb-free |
| Halogen-free | Halogen-free molding compound |
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