Galaxy Microelectronics
1N5820
Schottky Barrier Rectifier; Configuration: Single; VRRM Max (V): 20V; IAV Max (A): 3A; VFM Max (V): 0.475V; @ IF (A): 3A; IFSM Max (A): 80A; IR Max (uA): 2000uA; @VR (V): 20V; Package: DO-27
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Technical Specifications
Galaxy Microelectronics 1N5820 technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-27 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 20 |
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics 1N5820 Datasheet
Download the complete datasheet for Galaxy Microelectronics 1N5820 to view detailed technical specifications.
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