Galaxy Microelectronics
2SB1119
General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 25V; IC (A): 1A; HFE Min: 100; HFE Max: 560; VCE (V): 2V; IC (mA): 50mA; VCE(SAT) (V): 0.7V; IC (mA)1: 500mA; IB (mA): 50mA; FT Min (MHz): 180+ MHz; PTM Max (W): 0.5W; Package: SOT-89; package_code: SOT-89; mfr_package_code: SOT-89
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Technical Specifications
Galaxy Microelectronics 2SB1119 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics 2SB1119 Datasheet
Download the complete datasheet for Galaxy Microelectronics 2SB1119 to view detailed technical specifications.
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