Galaxy Microelectronics
2SB1184
Medium Power PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC (A): 3A; HFE Min: 82; HFE Max: 390; VCE (V): 3V; IC (mA): 500mA; VCE(SAT) (V): 1V; IC (mA)1: 2000mA; IB (mA): 200mA; FT Min (MHz): 70+ MHz; PTM Max (W): 1W; Package: TO-252; package_code: TO-252; mfr_package_code: TO-252
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Technical Specifications
Galaxy Microelectronics 2SB1184 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252 |
| Number of Elements | 1 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics 2SB1184 Datasheet
Download the complete datasheet for Galaxy Microelectronics 2SB1184 to view detailed technical specifications.
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