Galaxy Microelectronics
2SD1802
Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC (A): 3A; HFE Min: 100; HFE Max: 560; VCE (V): 2V; IC (mA): 100mA; VCE(SAT) (V): 0.5V; IC (mA)1: 2000mA; IB (mA): 100mA; FT Min (MHz): 150+ MHz; PTM Max (W): 1W; Package: TO-251/252; package_code: TO-251/252; mfr_package_code: TO-251/252
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Technical Specifications
Galaxy Microelectronics 2SD1802 technical specifications.
Compliance
REACH
unknown
Military Spec
False
Datasheet
Galaxy Microelectronics 2SD1802 Datasheet
Download the complete datasheet for Galaxy Microelectronics 2SD1802 to view detailed technical specifications.
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