The BAS16T is a silicon rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. It has a maximum reverse voltage of 85 volts and a maximum power dissipation of 0.15 watts. The diode is a dual terminal device with a number of terminals equal to 3. It is constructed from silicon and is a general purpose rectifier diode.
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Technical Specifications
Galaxy Microelectronics BAS16T technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 85 |
| Power Dissipation-Max | 0.15 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics BAS16T Datasheet
Download the complete datasheet for Galaxy Microelectronics BAS16T to view detailed technical specifications.
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