Galaxy Microelectronics
BAS70WS
Small Signal Schottky Diode; Configuration: Single; VRRM Max (V): 70V; IAV Max (A): 0.07A; VFM Max (V): 1V; @ IF (A): 0.015A; IR Max (uA): 0.1uA; @VR (V): 50V; TRR Max (ns): 5ns; Pin: F1; Package: SOD-323
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Technical Specifications
Galaxy Microelectronics BAS70WS technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 70 |
| Breakdown Voltage-Min | 70 |
| Power Dissipation-Max | 0.2 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics BAS70WS Datasheet
Download the complete datasheet for Galaxy Microelectronics BAS70WS to view detailed technical specifications.
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