Galaxy Microelectronics
BAT54L
Small Signal Schottky Diode; Configuration: Single; VRRM Max (V): 30V; IAV Max (A): 0.2A; VFM Max (V): 0.8V; @ IF (A): 0.1A; IR Max (uA): 2uA; @VR (V): 25V; TRR Max (ns): 5ns; Pin: F1; Package: DFN1006-2
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Technical Specifications
Galaxy Microelectronics BAT54L technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 30 |
| Breakdown Voltage-Min | 30 |
| Power Dissipation-Max | 0.2 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics BAT54L Datasheet
Download the complete datasheet for Galaxy Microelectronics BAT54L to view detailed technical specifications.
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