Galaxy Microelectronics
DTC143EE
NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 100mA; GI: 20; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 4.7K Ohm; R2 (KΩ): 4.7K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 150mW; Package: SOT-523
Quick Jump:
Technical Specifications
Galaxy Microelectronics DTC143EE technical specifications.
General
Number of Terminals
3
Terminal Position
DUAL
Number of Elements
1
Compliance
REACH
unknown
Military Spec
False
Datasheet
Galaxy Microelectronics DTC143EE Datasheet
Download the complete datasheet for Galaxy Microelectronics DTC143EE to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.