Galaxy Microelectronics
DTC143TE
NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 100mA; GI: 100; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 4.7K Ohm; R2 (KΩ): 0 Ohm; R1/R2 Typ: -; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 150mW; Package: SOT-523
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Technical Specifications
Galaxy Microelectronics DTC143TE technical specifications.
General
Number of Terminals
3
Terminal Position
DUAL
Number of Elements
1
Compliance
REACH
unknown
Military Spec
False
Datasheet
Galaxy Microelectronics DTC143TE Datasheet
Download the complete datasheet for Galaxy Microelectronics DTC143TE to view detailed technical specifications.
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