General purpose rectifier diode with a maximum repetitive peak reverse voltage of 600V and a maximum average forward current of 1A. Features a maximum forward voltage of 1.7V at 1A forward current and a maximum surge current of 30A. Exhibits a maximum reverse current of 5uA at 600V reverse voltage and a maximum reverse recovery time of 35ns. Operates within a temperature range of -55°C to 150°C, housed in an SMA package with two terminals.
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Technical Specifications
Galaxy Microelectronics ES1J technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 600 |
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics ES1J Datasheet
Download the complete datasheet for Galaxy Microelectronics ES1J to view detailed technical specifications.
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