Galaxy Microelectronics
MBF10N
Surface Mount Bridge Rectifier; VRRM Max (V): 1200V; IAV Max (A): 1A; VFM Max (V): 1.15V; @ IF (A): 1A; IFSM Max (A): 30A; IR Max (UA): 5uA; @VR (V): 1200V; Package: MBF
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Technical Specifications
Galaxy Microelectronics MBF10N technical specifications.
General
Max Operating Temperature
150
Number of Terminals
4
Min Operating Temperature
-55
Terminal Position
DUAL
Number of Elements
4
Diode Element Material
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
Rep Pk Reverse Voltage-Max
1200
Breakdown Voltage-Min
1200
Compliance
RoHS
Yes
REACH
unknown
Military Spec
False
Datasheet
Galaxy Microelectronics MBF10N Datasheet
Download the complete datasheet for Galaxy Microelectronics MBF10N to view detailed technical specifications.
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