Galaxy Microelectronics
MBR2560CT
Schottky Barrier Rectifier; Configuration: Dual,Common Cathode; VRRM Max (V): 60V; IAV Max (A): 25A; VFM Max (V): 0.8V; @ IF (A): 25A; IFSM Max (A): 150A; IR Max (uA): 100uA; @VR (V): 60V; Package: TO-220AB
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Technical Specifications
Galaxy Microelectronics MBR2560CT technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 2 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 60 |
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics MBR2560CT Datasheet
Download the complete datasheet for Galaxy Microelectronics MBR2560CT to view detailed technical specifications.
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