MJD122

Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 100V; IC (A): 8A; HFE Min: 1000; HFE Max: 12000; VCE (V): 4V; IC (mA): 4000mA; VCE(SAT) (V): 2V; IC (mA)1: 4000mA; IB (mA): 16mA; PTM Max (W): 1.5W; Package: TO-251/252; package_code: TO-251/252; mfr_package_code: TO-251/252