Galaxy Microelectronics
MMBD452
Small Signal Schottky Diode; Configuration: Dual,Series; VRRM Max (V): 30V; VFM Max (V): 0.6V; @ IF (A): 0.01A; IR Max (uA): 0.2uA; @VR (V): 25V; Pin: F6; Package: SOT-23
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Technical Specifications
Galaxy Microelectronics MMBD452 technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 30 |
| Breakdown Voltage-Min | 30 |
| Power Dissipation-Max | 0.225 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics MMBD452 Datasheet
Download the complete datasheet for Galaxy Microelectronics MMBD452 to view detailed technical specifications.
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