Galaxy Microelectronics
MMDT5551
General Purpose Dual NPN Bipolar Transistor; Polarity: NPN×2; V(BR)CEO Min (V): 160V; IC (A): 0.2A; HFE Min: 80; HFE Max: 250; VCE (V): 5V; IC (mA): 10mA; VCE(SAT) (V): 0.15V; IC (mA)1: 10mA; IB (mA): 1mA; FT Min (MHz): 100 MHz; PTM Max (W): 0.2W; Package: SOT-363; package_code: SOT-363; mfr_package_code: SOT-363
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Technical Specifications
Galaxy Microelectronics MMDT5551 technical specifications.
General
| Number of Terminals | 6 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics MMDT5551 Datasheet
Download the complete datasheet for Galaxy Microelectronics MMDT5551 to view detailed technical specifications.
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