Galaxy Microelectronics
RB715F
Small Signal Schottky Diode; Configuration: Dual,Common Cathode; VRRM Max (V): 40V; IAV Max (A): 0.03; VFM Max (V): 0.37V; @ IF (A): 0.001A; IR Max (uA): 1uA; @VR (V): 10V; Pin: F8; Package: SOT-323
Small Signal Schottky Diode; Configuration: Dual,Common Cathode; VRRM Max (V): 40V; IAV Max (A): 0.03; VFM Max (V): 0.37V; @ IF (A): 0.001A; IR Max (uA): 1uA; @VR (V): 10V; Pin: F8; Package: SOT-323
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Technical Specifications
Galaxy Microelectronics RB715F technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 40 |
| Breakdown Voltage-Min | 40 |
| Power Dissipation-Max | 0.15 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics RB715F Datasheet
Download the complete datasheet for Galaxy Microelectronics RB715F to view detailed technical specifications.
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