Galaxy Microelectronics
RGP30M
Fast Recovery Rectifier, VRRM MAX (V): 1000V; IAV MAX (A): 3A; VFM MAX (V): 1.3V; @ IF (A): 3A; IFSM MAX (A): 125A; IR MAX (UA): 5uA; @VR (V): 1000V; TRR MAX (NS): 500ns; Package: DO-27
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Technical Specifications
Galaxy Microelectronics RGP30M technical specifications.
General
Max Operating Temperature
125
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
AXIAL
JEDEC Package Code
DO-27
Number of Elements
1
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
Rep Pk Reverse Voltage-Max
1000
Compliance
REACH
unknown
Military Spec
False
Datasheet
Galaxy Microelectronics RGP30M Datasheet
Download the complete datasheet for Galaxy Microelectronics RGP30M to view detailed technical specifications.
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