Galaxy Microelectronics
SMBJ150C
Surface Mount TVS Diode; Direction: Bidirectional; V(BR) Typ (V): 167V; PPK Max (W): 600W; Condition: 10×1000us; VRWM Max (V): 150V; VBR Min (V): 167V; VBR Max (V): 204V; IR Max (uA): 5uA; VC Max (V): 268V; Package: SMB
PolarityBIDIRECTIONAL
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Technical Specifications
Galaxy Microelectronics SMBJ150C technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
DUAL
JEDEC Package Code
DO-214AA
Number of Elements
1
Polarity
BIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
150
Breakdown Voltage-Min
167
Non-rep Peak Rev Power Dis-Max
600
Clamping Voltage-Max
266
Breakdown Voltage-Nom
185.5
Breakdown Voltage-Max
204
Compliance
RoHS
Yes
REACH
unknown
Military Spec
False
Datasheet
Galaxy Microelectronics SMBJ150C Datasheet
Download the complete datasheet for Galaxy Microelectronics SMBJ150C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.