Unidirectional Surface Mount Transient Voltage Suppressor Diode designed for circuit protection. Features a 30V maximum repetitive peak reverse voltage (VRWM) and a 600W peak pulse power (PPK) rating for 10x1000µs waveforms. Offers a typical breakdown voltage of 33.3V, with a minimum of 33.3V and a maximum of 40.7V. Maximum clamping voltage is 48.4V, with a maximum leakage current of 5µA. Operates across a temperature range of -55°C to 150°C, housed in an SMB (DO-214AA) package with two terminals.
PolarityUNIDIRECTIONAL
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Technical Specifications
Galaxy Microelectronics SMBJ30A technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
DUAL
JEDEC Package Code
DO-214AA
Number of Elements
1
Polarity
UNIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
30
Breakdown Voltage-Min
33.3
Non-rep Peak Rev Power Dis-Max
600
Clamping Voltage-Max
48.4
Breakdown Voltage-Nom
35.05
Breakdown Voltage-Max
36.8
Compliance
RoHS
Yes
REACH
unknown
Military Spec
False
Datasheet
Galaxy Microelectronics SMBJ30A Datasheet
Download the complete datasheet for Galaxy Microelectronics SMBJ30A to view detailed technical specifications.
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