Unidirectional Surface Mount Transient Voltage Suppressor Diode designed for circuit protection. Features a 30V maximum repetitive peak reverse voltage (VRWM) and a 600W peak pulse power (PPK) rating for 10x1000µs waveforms. Offers a typical breakdown voltage of 33.3V, with a minimum of 33.3V and a maximum of 40.7V. Maximum clamping voltage is 48.4V, with a maximum leakage current of 5µA. Operates across a temperature range of -55°C to 150°C, housed in an SMB (DO-214AA) package with two terminals.
PolarityUNIDIRECTIONAL
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Technical Specifications
Galaxy Microelectronics SMBJ30A technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 30 |
| Breakdown Voltage-Min | 33.3 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 48.4 |
| Breakdown Voltage-Nom | 35.05 |
| Breakdown Voltage-Max | 36.8 |
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics SMBJ30A Datasheet
Download the complete datasheet for Galaxy Microelectronics SMBJ30A to view detailed technical specifications.
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