The G2R1000MT17J is a high-performance 1700V Silicon Carbide (SiC) MOSFET based on GeneSiC's second-generation (G2R™) technology. It offers low on-resistance, fast switching speeds, and high-temperature operation capability up to 175°C. It is designed for high-efficiency power conversion applications including auxiliary power supplies and solar inverters.
Genesic G2R1000MT17J technical specifications.
| Drain-Source Voltage (Vdss) | 1700V |
| Continuous Drain Current (Id) | 4A |
| On-State Resistance (Rds(on)) | 1000mΩ |
| Gate-Source Voltage (Vgs) | -5 to +20V |
| Power Dissipation (Pd) | 53W |
| Operating Temperature (Tj) | -55 to 175°C |
| Gate Charge (Qg) | 11nC |
| RoHS | Compliant |
| REACH | Compliant |
No datasheet is available for this part.
