The G3R160MT17J is a high-performance 1700V N-Channel Enhancement Mode Silicon Carbide (SiC) MOSFET developed using proprietary trench-assisted planar technology. It features low gate charge, low on-resistance, and high avalanche and short-circuit ruggedness. Designed for high-frequency switching and high-efficiency power systems, it is suitable for applications such as solar string inverters, EV fast charging, and high-voltage converters. The device is housed in a low-inductance TO-263-7 package with a dedicated Kelvin source pin to minimize gate ringing and improve switching performance.
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Genesic G3R160MT17J technical specifications.
| Drain-Source Voltage (Vdss) | 1700V |
| Drain-Source On-Resistance (Rds On) Typ. | 160mOhms |
| Continuous Drain Current (Id) @ 25°C | 18A |
| Gate Charge (Qg) | 29nC |
| Gate-Source Voltage (Vgs) Recommended | -5 to +15V |
| Gate-Source Threshold Voltage (Vgs th) | 2.7V |
| Power Dissipation (Pd) | 145W |
| Operating Temperature Range | -55 to 175°C |
| Input Capacitance (Ciss) | 854pF |
| Turn-On Delay Time | 14ns |
| Turn-Off Delay Time | 16ns |
| RoHS | Compliant |
| REACH | Compliant |
| Msl | 1 (Unlimited) |
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