The G3R40MT12D is a high-performance 1200V silicon carbide (SiC) MOSFET optimized for high-power applications where high efficiency and high frequency switching are required. It features low on-resistance, high temperature operation, and fast switching speeds with low gate charge.
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Genesic G3R40MT12D technical specifications.
| Drain-Source Voltage | 1200V |
| Continuous Drain Current (Tc=100°C) | 45A |
| Drain-Source On-Resistance (Max) | 48mΩ |
| Gate-Source Voltage (Max) | +15/-5V |
| Total Gate Charge | 106nC |
| Operating Temperature (Tj) | -55 to 175°C |
| Power Dissipation | 333W |
| Input Capacitance | 2929pF |
| RoHS | Compliant |
| REACH | Compliant |
| Halogen Free | Yes |
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