The G3R40MT12J is an N-Channel Enhancement Mode Silicon Carbide (SiC) MOSFET featuring G3R technology. It is designed for low conduction losses across all temperatures, faster switching with electromagnetically optimized design (LoRing), and robustness in body diode performance. It is 100% avalanche (UIL) tested and optimized for high-power applications requiring high efficiency and power density.
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Genesic G3R40MT12J technical specifications.
| Drain-Source Voltage (Vds) | 1200V |
| Drain-Source On Resistance (Rds(on)) | 40mΩ |
| Continuous Drain Current (Id) @ 100°C | 47A |
| Continuous Drain Current (Id) @ 25°C | 66A |
| Gate-Source Voltage (Vgs) Recommended | -5 / +15V |
| Power Dissipation (Pd) @ 25°C | 330W |
| Operating Temperature Range | -55 to 175°C |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Total Gate Charge (Qg) | 114nC |
| Non-Repetitive Avalanche Energy (Eas) | 374mJ |
| RoHS | Compliant |
| REACH | Compliant |
Download the complete datasheet for Genesic G3R40MT12J to view detailed technical specifications.
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