The G3R450MT17J is a 1700V N-channel Silicon Carbide (SiC) MOSFET from the G3R series. It is designed for high-voltage power conversion applications, offering low on-resistance, high temperature operation up to 175°C, and fast switching speeds with low gate charge.
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Technical Specifications
Genesic G3R450MT17J technical specifications.
General
| Drain to Source Voltage (Vdss) | 1700V |
| Current - Continuous Drain (Id) @ 25°C | 9A |
| Rds On (Max) @ Id, Vgs | 585 @ 4A, 15VmOhm |
| Gate Charge (Qg) (Max) @ Vgs | 18 @ 15VnC |
| Input Capacitance (Ciss) (Max) @ Vds | 454 @ 1000VpF |
| Operating Temperature (TJ) | -55 to 175°C |
| Power Dissipation (Max) | 91W |
| Vgs(th) (Max) @ Id | 2.7 @ 2mAV |
Compliance
| RoHS | Compliant |
| REACH | Compliant |
Datasheet
Genesic G3R450MT17J Datasheet
Download the complete datasheet for Genesic G3R450MT17J to view detailed technical specifications.
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