The G3R45MT17K is a high-performance 1700V Silicon Carbide (SiC) MOSFET in a TO-247-4 package (Kelvin Source). It features low on-resistance and high current handling capabilities, belonging to the third-generation G3R series designed for high-efficiency power conversion applications.
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Genesic G3R45MT17K technical specifications.
| Drain to Source Voltage (Vdss) | 1700V |
| Drain-Source On-Resistance (RDSon) @ 15V | 45mΩ |
| Drain-Source On-Resistance (RDSon) @ 18V | 38mΩ |
| Continuous Drain Current (Id) @ 25°C | 61A |
| Continuous Drain Current (Id) @ 100°C | 44A |
| Gate-Source Voltage (Vgs) | -5/+15V |
| Operating Temperature (Tj) | -55 to 175°C |
| Gate Charge (Qg) | 125nC |
| RoHS | Compliant |
| REACH | Compliant |
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