The G3R75MT12K is a high-performance 1200V 75mΩ Silicon Carbide (SiC) MOSFET utilizing G3R technology. It features an enhancement mode N-channel design optimized for low conduction losses and fast switching with a Kelvin source package to reduce EMI and improve switching efficiency. It is designed for high-power applications including solar inverters, EV charging, and motor drives.
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Genesic G3R75MT12K technical specifications.
| Drain-Source Voltage (Vdss) | 1200V |
| Continuous Drain Current (Id) | 41A |
| Drain-Source On-Resistance (Rds On) Max | 90mOhm |
| Gate-Source Voltage (Vgs) Max | ±15V |
| Gate Threshold Voltage (Vgs(th)) | 2.69V |
| Power Dissipation (Pd) | 207W |
| Input Capacitance (Ciss) | 1560pF |
| Gate Charge (Qg) | 54nC |
| Operating Temperature | -55 to 175°C |
| RoHS | Compliant |
| REACH | Compliant |
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