The Genesic GA10JT12-263 is a high-power surface mount MOSFET with a maximum operating temperature of 175°C and a maximum power dissipation of 170W. It features a continuous drain current of 25A and a drain to source voltage of 1.2kV. The device is packaged in a TO-263 case and is available in quantities of 50. It is compliant with RoHS regulations, but does not meet the requirements for Reach SVHC compliance. The device has an input capacitance of 1.403nF and a maximum Rds on resistance of 120mR.
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Genesic GA10JT12-263 technical specifications.
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Input Capacitance | 1.403nF |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 170W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 120mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Genesic GA10JT12-263 to view detailed technical specifications.
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