The GB05MPS33-263 is a high-performance 3300V, 11A (Repetitive Peak Reverse Voltage) Silicon Carbide (SiC) Schottky Merged PiN Schottky (MPS) diode. It is designed for high-voltage applications requiring superior efficiency and high-speed switching with zero reverse recovery charge. This device features a low forward voltage drop and is housed in a surface-mount TO-263 package, suitable for high-frequency power electronics.
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Technical Specifications
Genesic GB05MPS33-263 technical specifications.
General
| Voltage - Rated (VRRM) | 3300V |
| Current - Average Rectified (Io) | 5A |
| Current - Repetitive Peak Reverse | 11A |
| Diode Type | Silicon Carbide Schottky |
| Number of Phases | 1 |
| Number of Elements | 1 |
Compliance
| RoHS | Compliant |
Datasheet
Genesic GB05MPS33-263 Datasheet
Download the complete datasheet for Genesic GB05MPS33-263 to view detailed technical specifications.
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