The GB2X50MPS12-227 is a 1200V, 100A Silicon Carbide (SiC) Schottky Merged PiN Schottky (MPS) diode in a dual isolated configuration. It features a high isolation voltage base (3000V), extremely fast switching speeds, high avalanche (UIS) capability, and a positive temperature coefficient of forward voltage (VF), which facilitates easy paralleling. Designed for high-frequency power applications, it provides low switching losses and temperature-independent switching behavior.
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Genesic GB2X50MPS12-227 technical specifications.
| Repetitive Peak Reverse Voltage | 1200V |
| Average Forward Current (Per Leg) | 50A |
| Average Forward Current (Total) | 100A |
| Continuous Forward Current (Tc=25°C) | 186A |
| Total Capacitive Charge (Per Leg) | 398nC |
| Operating Temperature Max | 175°C |
| Forward Voltage (IF=50A, Tj=25°C) | 1.5V |
| Number of Pins | 4 |
| Isolation Voltage | 3000V |
| RoHS | Compliant |
| REACH | Compliant |
Download the complete datasheet for Genesic GB2X50MPS12-227 to view detailed technical specifications.
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