The GC50MPS33H is a 3300V, 50A Silicon Carbide (SiC) Merged-PiN-Schottky (MPS) diode designed for high-voltage applications. It features high surge and avalanche robustness, zero reverse recovery current, and a positive temperature coefficient of forward voltage which enables easy paralleling. This diode is optimized for high-frequency power conversion, offering improved system efficiency and reduced cooling requirements.
Genesic GC50MPS33H technical specifications.
| Repetitive Peak Reverse Voltage | 3300V |
| Continuous Forward Current | 50A |
| Forward Voltage | 1.7V |
| Total Capacitive Charge | 430nC |
| Operating Temperature Range | -55 to 175°C |
| Reverse Current | 20µA |
| RoHS | Compliant |
| REACH | Compliant |
Download the complete datasheet for Genesic GC50MPS33H to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.