The GD10MPS17H is a 1700V Silicon Carbide (SiC) Merged PiN Schottky (MPS) diode designed for high-efficiency power conversion. It features a zero reverse recovery current, zero forward recovery voltage, and a temperature-independent switching behavior. This device is optimized for high-frequency switching, high-voltage power supplies, and harsh environmental conditions, providing enhanced thermal performance and lower power losses compared to standard silicon diodes.
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Genesic GD10MPS17H technical specifications.
| Repetitive Peak Reverse Voltage | 1700V |
| Continuous Forward Current | 10A |
| Forward Voltage Drop | 1.8V |
| Total Capacitive Charge | 51nC |
| Operating Temperature | -55 to 175C |
| Surge Forward Current (tp=8.3ms) | 80A |
| Power Dissipation | 167W |
| RoHS | Compliant |
| ECCN | EAR99 |
Download the complete datasheet for Genesic GD10MPS17H to view detailed technical specifications.
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