The GD2X100MPS12N is a high-performance Silicon Carbide (SiC) Schottky Merged PiN Schottky (MPS) diode module featuring a dual isolated configuration in a SOT-227 package. It is designed for high-efficiency power conversion applications requiring fast switching, low forward voltage drop, and high thermal reliability in high-voltage environments.
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Technical Specifications
Genesic GD2X100MPS12N technical specifications.
General
| Repetitive Peak Reverse Voltage | 1200V |
| Average Forward Current | 272A |
| Total Capacitive Charge | 322nC |
| Forward Voltage | 1.5V |
| Maximum Operating Temperature | 175°C |
| Isolation Voltage | 3000V |
Compliance
| RoHS | Compliant |
Datasheet
Genesic GD2X100MPS12N Datasheet
Download the complete datasheet for Genesic GD2X100MPS12N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.