The BD810 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 10A. It has a maximum power dissipation of 90W and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a TO-220-3 case and is available in quantities of 50. However, it is not RoHS compliant and contains lead.
PackageTO-220-3
Current Rating-10A
PolarityPNP
Power90W
Quick Jump:
Technical Specifications
Onsemi BD810 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector-emitter Voltage-Max | 1.1V |
| Current Rating | -10A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 1.5MHz |
| hFE Min | 30 |
| Lead Free | Contains Lead |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 90W |
| RoHS Compliant | No |
| Transition Frequency | 1.5MHz |
| DC Rated Voltage | -80V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BD810 Datasheet
Download the complete datasheet for Onsemi BD810 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
