Infineon
F4-100R06KL4
Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, MODULE-24
PackageModule
MountingScrew
Power430W
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Technical Specifications
Infineon F4-100R06KL4 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.95V |
| Collector-emitter Voltage-Max | 600V |
| Max Collector Current | 130A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Package Quantity | 500 |
| Power Dissipation | 430W |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon F4-100R06KL4 Datasheet
Download the complete datasheet for Infineon F4-100R06KL4 to view detailed technical specifications.
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