NPN bipolar junction transistor in a TO-92-3 package, designed for through-hole mounting. Features a 400V collector-emitter breakdown voltage and a 1.5A maximum collector current. Offers a 4MHz transition frequency and a minimum hFE of 9. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 1.1W. This RoHS compliant component is lead-free.
Frequency4MHz
PackageTO-92-3
Current Rating1.5A
MountingThrough Hole
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Technical Specifications
Onsemi FJN13003TA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 9V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| hFE Min | 9 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 1.1W |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 400V |
| Weight | 0.1782g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJN13003TA Datasheet
Download the complete datasheet for Onsemi FJN13003TA to view detailed technical specifications.
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