N-Channel Power MOSFET, QFET® series, featuring a 200V drain-to-source breakdown voltage and 31A continuous drain current. This single-element transistor offers a low 75mΩ Rds On at 5V Vgs, with fast switching speeds including 40ns turn-on delay and 115ns fall time. Packaged in a TO-220AB through-hole mount, it supports up to 180W power dissipation and operates from -55°C to 150°C. RoHS compliant and lead-free.
PackageTO-220AB
Current Rating31A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP34N20 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 31A |
| Current Rating | 31A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 200V |
| Element Configuration | Single |
| Fall Time | 115ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 3.1nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 18W |
| Rds On Max | 75mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 125ns |
| Turn-On Delay Time | 40ns |
| DC Rated Voltage | 200V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP34N20 Datasheet
Download the complete datasheet for Onsemi FQP34N20 to view detailed technical specifications.
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