N-Channel Power MOSFET, QFET® series, featuring a 250V drain-source breakdown voltage and a continuous drain current of 7.4A. This through-hole mounted component offers a low on-resistance of 420mΩ at a 10V gate-source voltage. It operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. The MOSFET exhibits a turn-on delay time of 13ns and a fall time of 45ns, with an input capacitance of 700pF. Packaged in a TO-251-3 (IPAK) case, this RoHS compliant component is supplied in a tube.
PackageTO-251-3
Current Rating7.4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQU9N25TU technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 7.4A |
| Current Rating | 7.4A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 420mR |
| Drain to Source Voltage (Vdss) | 250V |
| Element Configuration | Single |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 700pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Through Hole |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 420mR |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 250V |
| Weight | 0.34308g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQU9N25TU Datasheet
Download the complete datasheet for Onsemi FQU9N25TU to view detailed technical specifications.
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