The IPB65R150CFDAATMA1 is a 650V power MOSFET with a maximum continuous drain current of 22.4A. It features a TO-263-3 package and is designed for surface mount applications. The device operates over a temperature range of -40°C to 150°C and is compliant with AEC-Q101 and RoHS standards. The MOSFET has a maximum power dissipation of 195.3W and an on-state resistance of 150mR.
PackageTO-263-3
MountingSurface Mount
Power195.3W
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Technical Specifications
Infineon IPB65R150CFDAATMA1 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 22.4A |
| Drain to Source Voltage (Vdss) | 650V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.34nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 195.3W |
| Mount | Surface Mount |
| On-State Resistance | 150mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 195.3W |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, CoolMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB65R150CFDAATMA1 Datasheet
Download the complete datasheet for Infineon IPB65R150CFDAATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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