N-Channel Power MOSFET featuring 100V drain-source voltage and 5.7A continuous drain current. This silicon, metal-oxide semiconductor field-effect transistor offers a low on-resistance of 0.035 ohms. Designed with a single element and three terminals positioned at the bottom, it operates up to a maximum temperature of 150°C. The component is HALOGEN FREE and ROHS COMPLIANT.
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Technical Specifications
Infineon IRF6645TRPBF technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRF6645TRPBF Datasheet
Download the complete datasheet for Infineon IRF6645TRPBF to view detailed technical specifications.
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