PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-92 package. Features a maximum collector-emitter voltage (VCEO) of 400V and a continuous collector current rating of 500mA. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 10MHz. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 750mW. This RoHS compliant component is supplied in bulk packaging.
Onsemi KSA1625KBU technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -400V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -7V |
| Frequency | 10MHz |
| Gain Bandwidth Product | 10MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 10000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 750mW |
| RoHS Compliant | Yes |
| Series | KSA1625 |
| Transition Frequency | 10MHz |
| DC Rated Voltage | -400V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSA1625KBU to view detailed technical specifications.
No datasheet is available for this part.