The MJD112-001 is a single NPN bipolar junction transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 2A. It is packaged in a TO-251-3 plastic case and has a maximum power dissipation of 20W. The transistor operates over a temperature range of -65°C to 150°C and is not RoHS compliant.
PackageTO-251-3
Current Rating2A
PolarityNPN
Power20W
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Technical Specifications
Onsemi MJD112-001 technical specifications.
General
| Package/Case | TO-251-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Continuous Collector Current | 2A |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Lead Free | Contains Lead |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.75W |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 20W |
| RoHS Compliant | No |
| Transition Frequency | 25MHz |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MJD112-001 Datasheet
Download the complete datasheet for Onsemi MJD112-001 to view detailed technical specifications.
No datasheet is available for this part.
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