PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-92 package. Features a 45V collector-emitter breakdown voltage and a maximum collector current of 500mA. Operates with a transition frequency of 250MHz and a maximum power dissipation of 625mW. Offers a minimum DC current gain (hFE) of 100 and a wide operating temperature range from -55°C to 150°C. This RoHS compliant component is supplied in bulk packaging.
Frequency250MHz
PackageTO-92
Current Rating-500mA
MountingThrough Hole
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Technical Specifications
Onsemi PN200 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PN200 |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -45V |
| Weight | 0.201g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi PN200 Datasheet
Download the complete datasheet for Onsemi PN200 to view detailed technical specifications.
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