N-channel power MOSFET featuring 600V drain-source breakdown voltage and 15A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 280mΩ Rds On resistance and 156W power dissipation. Designed for efficient switching, it exhibits a 10ns turn-on delay and 5ns fall time. Packaged in a TO-262-3 (I2PAK) package, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-262-3
Current Rating15A
PolarityN-CHANNEL
Power156W
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Technical Specifications
Infineon SPI15N60C3 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 15A |
| Current Rating | 15A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.66nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 156W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 156W |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 650V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPI15N60C3 Datasheet
Download the complete datasheet for Infineon SPI15N60C3 to view detailed technical specifications.
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