N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 42A continuous drain current. Offers a low 63mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, this component boasts fast switching characteristics with a 19ns fall time. Maximum power dissipation is rated at 40W, operating across a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power40W
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Technical Specifications
Stmicroelectronics STF57N65M5 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 42A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 63mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 63mR |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 4.2nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 63mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 73ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF57N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STF57N65M5 to view detailed technical specifications.
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