This device is an N-channel trench power MOSFET in a TO-220 package. It is rated for 60 V drain-source voltage, 110 A drain current, and 160 W power dissipation. Typical on-resistance is 5.1 mΩ at 10 V gate drive and 6 mΩ at 4.5 V gate drive, with maximum values of 6.4 mΩ and 8.4 mΩ respectively. The gate threshold voltage is 2.5 V maximum, total gate charge is 144 nC, and input capacitance is 6600 pF. The device is marked RoHS compliant and halogen free, and the listing indicates no ESD diode.
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Goford Semiconductor G110N06T technical specifications.
| Channel Type | N |
| Technology | TRENCH |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Drain Current | 110A |
| Power Dissipation | 160W |
| Gate Threshold Voltage Max | 2.5V |
| Rds(on) Typ @ Vgs=10V | 5.1mΩ |
| Rds(on) Typ @ Vgs=4.5V | 6mΩ |
| Rds(on) Max @ Vgs=10V | 6.4mΩ |
| Rds(on) Max @ Vgs=4.5V | 8.4mΩ |
| Total Gate Charge | 144nC |
| Gate-Source Charge | 19nC |
| Gate-Drain Charge | 34nC |
| Input Capacitance | 6600pF |
| Reverse Transfer Capacitance | 300pF |
| ESD Diode | NO |
| RoHS | Yes |
| Halogen Free | Yes |
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