This N-channel power MOSFET uses trench technology and is offered in a TO-252 package. It is rated for 60 V drain-source voltage, ±20 V gate-source voltage, 80 A continuous drain current, and 110 W power dissipation. Typical on-resistance is 7 mΩ at 10 V gate drive with an 8.4 mΩ maximum rating, and the device lists 61 nC total gate charge with 3400 pF input capacitance. The device is marked RoHS and halogen free and does not list an integrated ESD diode.
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Goford Semiconductor G86N06K technical specifications.
| Channel Type | N |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 80A |
| Power Dissipation | 110W |
| Gate Threshold Voltage Max | 4V |
| RDS(on) Typ @ VGS=10V | 7mΩ |
| RDS(on) Max @ VGS=10V | 8.4mΩ |
| Total Gate Charge | 61nC |
| Gate-Source Charge | 16nC |
| Gate-Drain Charge | 20nC |
| Input Capacitance | 3400pF |
| Reverse Transfer Capacitance | 210pF |
| Technology | TRENCH |
| Package | TO-252 |
| ESD Diode | NO |
| RoHS | Yes |
| Halogen Free | Yes |
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