This device is an N-channel power MOSFET rated for 60 V drain-source voltage and 110 A continuous drain current. It is offered in a DFN3*3-8L package and supports a gate-source voltage of ±20 V. The device lists 8 mΩ typical RDS(on) at 10 V gate drive and 10.5 mΩ typical at 4.5 V, with 24 nC total gate charge. It is identified as RoHS compliant and halogen free and uses GOFORD's SGT technology.
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Goford Semiconductor GT110N06D3 technical specifications.
| Channel Type | N |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 110A |
| Power Dissipation | 25W |
| Gate Threshold Voltage Max | 2.4V |
| RDS(on) Typical @ VGS=10V | 8mΩ |
| RDS(on) Typical @ VGS=4.5V | 10.5mΩ |
| RDS(on) Max @ VGS=10V | 11mΩ |
| RDS(on) Max @ VGS=4.5V | 14mΩ |
| Total Gate Charge | 24nC |
| Gate-Source Charge | 7nC |
| Gate-Drain Charge | 2.5nC |
| Input Capacitance | 1059pF |
| Reverse Transfer Capacitance | 22pF |
| Technology | SGT |
| ESD Diode | NO |
| RoHS | Yes |
| Halogen Free | Yes |
Download the complete datasheet for Goford Semiconductor GT110N06D3 to view detailed technical specifications.
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