This device is an N-channel power MOSFET in an SOP-8 package. It is rated for 60 V drain-to-source voltage and 14 A continuous drain current with a ±20 V gate-to-source rating. Typical on-resistance is 8.5 mΩ at 10 V gate drive and 10 mΩ at 4.5 V, with a maximum gate-threshold voltage of 2.4 V. The device uses SGT technology and lists 24 nC total gate charge, 1475 pF input capacitance, and 9 pF reverse transfer capacitance. It is marked RoHS and halogen free.
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Goford Semiconductor GT110N06S technical specifications.
| Channel Type | N |
| ESD Diode | No |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 14A |
| Power Dissipation | 3W |
| Gate Threshold Voltage Max | 2.4V |
| RDS(on) Typ @ VGS=10V | 8.5mΩ |
| RDS(on) Typ @ VGS=4.5V | 10mΩ |
| RDS(on) Max @ VGS=10V | 11mΩ |
| Total Gate Charge | 24nC |
| Gate-Source Charge | 7nC |
| Gate-Drain Charge | 2.5nC |
| Input Capacitance | 1475pF |
| Reverse Transfer Capacitance | 9pF |
| Technology | SGT |
| RoHS | Yes |
| Halogen Free | Yes |
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