N-channel silicon power MOSFET provides a 100 V drain-source breakdown rating and 150 A maximum drain current. The device has a single MOSFET configuration in a TO-220 through-hole package with three pins and a bottom thermal pad. On-resistance is listed as 0.0037 ohm typical and 0.0045 ohm maximum at 10 V gate-source drive and 25 °C. Total gate charge is 100 nC typical, with 220 W maximum power dissipation and 0.7 °C/W maximum junction-to-case thermal resistance.
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| Device Type | Power MOSFET |
| Channel Type | N-Type |
| Configuration | Single |
| Semiconductor Material | Silicon |
| Drain-Source Breakdown Voltage | 100V |
| Maximum Drain Current | 150A |
| Typical On-Resistance | 0.0037ohm |
| Maximum On-Resistance | 0.0045ohm |
| On-Resistance Test Gate-Source Voltage | 10V |
| Typical Total Gate Charge | 100nC |
| Typical Gate-Source Charge | 43.4nC |
| Typical Gate-Drain Charge | 19.7nC |
| Maximum Power Dissipation | 220W |
| Maximum Junction-to-Case Thermal Resistance | 0.7°C/W |
| Package Pins | 3 |
| Package Footprint | 10.00 x 15.60mm |
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